QUATERNARY ALLOY INFRARED HETEROJUNCTION DETECTORS

被引：4
作者：
CLAWSON, AR
LUM, WY
WIEDER, HH
机构：
来源：
OPTICAL ENGINEERING | 1978年 / 17卷 / 06期
关键词：
D O I：
10.1117/12.7972302
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：666 / 670
页数：5
相关论文
共 24 条
[1]   DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J].
ANTYPAS, GA ;
EDGECUMBE, J .
JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) :132-138
[2]  
ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P96
[3]  
ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48
[4]   INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].
ASTLES, MG ;
SMITH, FGH ;
WILLIAMS, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757
[5]  
BOGATOV AP, 1975, SOV PHYS SEMICOND+, V9, P1282
[6]   SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J].
DENTAI, AG ;
LEE, TP ;
BURRUS, CA ;
BUEHLER, E .
ELECTRONICS LETTERS, 1977, 13 (16) :484-485
[7]  
DOLGINOV LM, 1975, SOV PHYS SEMICOND+, V9, P871
[8]   THE PREDICTION OF SEMICONDUCTING PROPERTIES IN INORGANIC COMPOUNDS [J].
GOODMAN, CHL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :305-314
[9]   ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285
[10]  
HSIEH JJ, 1977, GALLIUM ARSENIDE REL, P37
123