GRAIN-BOUNDARY STUDIES IN 4H AND 6H SILICON-CARBIDE IN AS-SINTERED STATE AND AFTER HIGH-TEMPERATURE DEFORMATION

被引：0
|
作者：
LAURENTPINSON, E
NOUET, G
VICENS, J
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The microstructure of different hot-pressed silicon carbide materials with Al-additives are given from T.E.M. investigations. The specimens have been studied in the as-sintered materials and after thermomechanical treatments. The alpha hexagonal silicon carbide crystals appear with different polytypes, mainly the 4H and 6H polytypes. Well defined crystallographic grain boundary planes between silicon carbide grains are often observed. The most frequent grain boundary plane is the (0001) plane for one crystal. Facetted grain boundaries have been found in annealed then deformed specimens.
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页码：543 / 544
页数：2
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