SILICON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AMORPHOUS AND MICROCRYSTALLINE EMITTERS

被引：18

作者：

SYMONS, J

GHANNAM, M

NEUGROSCHEL, A

NIJS, J

MERTENS, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90079-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1143 / 1145

页数：3

共 7 条

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APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

[6] A TRUE POLYSILICON EMITTER TRANSISTOR [J].

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :288-290

[7] A STUDY OF N+-SIPOS-P-SI HETEROJUNCTION EMITTERS [J].

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