FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE

被引：85

作者：

PRIETSCH, M

DOMKE, M

LAUBSCHAT, C

KAINDL, G

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.60.436

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：436 / 439

页数：4

共 18 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[3]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[4] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J].

FLORES, F ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02) :145-175

[5] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[6] CALCULATED PHOTOEMISSION SPECTRA OF THE 4F STATES IN THE RARE-EARTH-METALS [J].

GERKEN, F .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1983, 13 (03) :703-713

[7] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J].

GRIONI, M ;

JOYCE, JJ ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 32 (02) :962-968

[8] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[9] SHORT-RANGE POTENTIAL VARIATIONS AT A METAL-SEMICONDUCTOR INTERFACE [J].

KANSKI, J ;

SVENSSON, SP ;

ANDERSSON, TG ;

LELAY, G .

SOLID STATE COMMUNICATIONS, 1986, 60 (10) :793-796

[10] SCHOTTKY-BARRIER FORMATION ON III-V SEMICONDUCTOR SURFACES - A CRITICAL-EVALUATION [J].

LINDAU, I ;

KENDELEWICZ, T .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1986, 13 (01) :27-55

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