BLINK FURNACE ANNEALING OF ION-IMPLANTED SILICON

被引：5
|
作者：
KUGIMIYA, K
FUSE, G
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.1143/JJAP.21.L16
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L16 / L18
页数：3
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