BLINK FURNACE ANNEALING OF ION-IMPLANTED SILICON

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 412 - 422

[2] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957

[3] COHEN RL, 1978, APPL PHYS LETT, V33, P75

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 175 - 177

[6] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 327 - 329

[7] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[9] DISLOCATION NETWORKS IN PHOSPHORUS-IMPLANTED SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (03): : 663 - 691

[10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 188 - 192

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 412 - 422

[2] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957

[3] COHEN RL, 1978, APPL PHYS LETT, V33, P75

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 175 - 177

[6] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 327 - 329

[7] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[9] DISLOCATION NETWORKS IN PHOSPHORUS-IMPLANTED SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (03): : 663 - 691

[10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 188 - 192