PROPERTIES OF AVALANCHE PHOTODIODES BASED ON SI-TIO2 HETEROJUNCTIONS

被引：0
|
作者：
BOLTAEV, AP
BURBAEV, TM
KALYUZHNAYA, GA
KURBATOV, VA
OSINA, TI
SOLOVEV, NN
机构：
来源：
SEMICONDUCTORS | 1995年 / 29卷 / 07期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The characteristics of p-Si-TiO2 avalanche photodiodes with a high concentration of oxygen vacancies in the TiO2 layer have been studied. Measurements of the photosensitivity and noise of the photodiodes show that the latter can combine a very high photosignal multiplication factor M = 7 X 10(4) with a relatively low noise coefficient F = 25, in contrast with homojunction avalanche photodiodes. (C) 1995 American Institute of Physics.
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页码：630 / 632
页数：3
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