CHARACTERIZATION OF AL-ALLNAS-GALNAS HETEROSTRUCTURES

被引：0
|
作者：
MORGAN, DV
OHNO, H
WOOD, CEC
SCHAFF, WJ
BOARD, K
EASTMAN, LF
机构：
[1] UNIV WALES UNIV COLL SWANSEA,DEPT ELECT ENGN,SWANSEA SA2 8PP,W GLAMORGAN,WALES
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[3] CORNELL UNIV,FAC NATL RES & RESOURCE,ITHACA,NY 14853
[4] UNIV TOKYO,INST IND SCI,MEGURO KU,TOKYO 152,JAPAN
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 04期
关键词：
Compendex;
D O I：
10.1049/ip-i-1.1981.0036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：141 / 143
页数：3
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