DEFECTS IN POROUS SILICON INVESTIGATED BY OPTICALLY DETECTED AND BY ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUES

被引：54

作者：

MEYER, BK ^{[1
]}

HOFMANN, DM ^{[1
]}

STADLER, W ^{[1
]}

PETROVAKOCH, V ^{[1
]}

KOCH, F ^{[1
]}

OMLING, P ^{[1
]}

EMANUELSSON, P ^{[1
]}

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defect properties of as-etched and annealed porous silicon are studied by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR). The paramagnetic defect observed is closely related to the P(b0) center at the Si/SiO2 interface. In EPR a minimum defect density of 10(16) cm-3 is observed for the as-etched silicon, which reaches a maximum of 8 x 10(18) cm-3 for samples annealed at about 400-degrees-C. In the ODMR experiments, the same dangling bond center is observed on the 1.5 eV luminescence band enhancing the luminescence-but with increased sensitivity and as a decrease of the emission intensity in the infrared emission band at 1 eV of porous silicon.

引用

页码：2120 / 2122

页数：3

共 21 条

[1] SPIN-DEPENDENT EFFECTS IN POROUS SILICON [J].