COMPARISON OF ION-BEAM MIXING AT ROOM-TEMPERATURE AND 40-K

被引：18

作者：

PAINE, BM

NICOLET, MA

NEWCOMBE, RG

THOMPSON, DA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90678-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：115 / 119

页数：5

共 15 条

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[8] ION BEAM MIXING IN AMORPHOUS SILICON - 1. EXPERIMENTAL INVESTIGATION. [J].

Matteson, S. ;

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[9]

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[10]

MOTEFF J, 1965, RAD EFFECT, P789

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