GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS

被引：78

作者：

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1149/1.2403306

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1574 / 1577

页数：4

共 12 条

[1] LIQUID-PHASE EPITAXY OF INXGA1-XAS
ANTYPAS, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &
[2] ANTYPAS GA, UNPUBLISHED
[3] ANTYPAS GA, 1972, GALLIUM ARSENIDE REL, P48
[4] ANTYPAS GA, 1973, IPPS17 C SER
[5] BURNHAM RD, 1972, SOV PHYS SEMICOND+, V6, P77
[6] BURNHAM RD, 1970, APPL PHYSICS LETTERS, V17, P445
[7] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP
JAMES, LW
ANTYPAS, GA
MOON, RL
EDGECUMBE, J
BELL, RL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271
[8] MCVITTIE JP, 1972, THESIS STANFORD U
[9] NUESE CJ, 1971, T MET SOC AIME, V2, P789
[10] ROSZTOCZY FE, TO BE PUBLISHED