GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS

被引：78

作者：

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1149/1.2403306

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1574 / 1577

页数：4

共 12 条

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[2]

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[3]

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[4]

ANTYPAS GA, 1973, IPPS17 C SER

[5]

BURNHAM RD, 1972, SOV PHYS SEMICOND+, V6, P77

[6]

BURNHAM RD, 1970, APPL PHYSICS LETTERS, V17, P445

[7] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP [J].

JAMES, LW ;

ANTYPAS, GA ;

MOON, RL ;

EDGECUMBE, J ;

BELL, RL .

[8]

MCVITTIE JP, 1972, THESIS STANFORD U

[9]

NUESE CJ, 1971, T MET SOC AIME, V2, P789

[10]

ROSZTOCZY FE, TO BE PUBLISHED