CORRELATION BETWEEN TRAP CHARACTERIZATION BY LOW-FREQUENCY NOISE, MUTUAL CONDUCTANCE DISPERSION, OSCILLATIONS AND DLTS IN GAAS-MESFETS

被引：15
作者：
ABDALA, MA
JONES, BK
机构：
[1] School of Physics and Materials, Lancaster University, Lancaster
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 12期
关键词：
D O I：
10.1016/0038-1101(92)90251-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of traps observed by excess generation-recombination (g-r) noise spectroscopy, g(M)-frequency dispersion spectroscopy and low frequency oscillations are correlated with the properties observed by different versions of DLTS experiments applied to GaAs MESFETs. A comparison of the trap parameters reveals the relative sensitivities of the techniques and any systematic differences. The DLTS experiments have located the positions of the traps so that the bias dependence of the trap parameters for each technique should allow any unknown trap also to be located within the device
引用
收藏
页码：1713 / 1719
页数：7
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