SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)

被引：20

作者：

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

YEH, JL ^{[1
]}

TSANG, JC ^{[1
]}

KAHN, A ^{[1
]}

MARK, P ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 505

页数：5

共 21 条

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[12] INFLUENCE OF BOUNDARY-CONDITIONS AND OF ELECTRONIC AND VIBRATIONAL SURFACE PHENOMENA ON LOW-ENERGY-ELECTRON DIFFRACTION FROM LOW-INDEX FACES OF ALUMINUM [J].

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LIPARI, NO ;

LANDMAN, U .

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[13]

DUKE CB, UNPUBLISHED

[14] SURFACE AND NEAR-SURFACE ATOMIC-STRUCTURE OF GAAS (110) [J].

KAHN, A ;

SO, E ;

MARK, P ;

DUKE, CB ;

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[15]

Mark P., 1975, Critical Reviews in Solid State Sciences, V5, P189, DOI 10.1080/10408437508243480

[16]

MEYER RA, UNPUBLISHED

[17] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS [J].

MEYER, RJ ;

DUKE, CB ;

PATON, A ;

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SO, E ;

YEH, JL ;

MARK, P .

PHYSICAL REVIEW B, 1979, 19 (10) :5194-5205

[18] IONICITY OF CHEMICAL BOND IN CRYSTALS [J].

PHILLIPS, JC .

REVIEWS OF MODERN PHYSICS, 1970, 42 (03) :317-&

[19] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110) [J].

TONG, SY ;

LUBINSKY, AR ;

MRSTIK, BJ ;

VANHOVE, MA .

PHYSICAL REVIEW B, 1978, 17 (08) :3303-3309

[20]

WYCKOFF RWG, 1963, CRYST STRUCT, V1, P108

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