SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)

被引：20

作者：

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

YEH, JL ^{[1
]}

TSANG, JC ^{[1
]}

KAHN, A ^{[1
]}

MARK, P ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 505

页数：5

共 21 条

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