NEW METHODS FOR CARRIER LIFETIME MEASUREMENTS IN P-PI-N STRUCTURES

被引：8

作者：

COLLET, J

BAILON, L

BRABANT, JC

BARRAU, J

BROUSSEAU, M

机构：

[1] UNIV PAUL SABATIER, CNRS, LAB PHYS SOLIDES, 31 007 TOULOUSE, FRANCE

[2] INST NATL SCI APPL, TOULOUSE, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期

关键词：

D O I：

10.1016/0038-1101(73)90199-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：999 / 1005

页数：7

共 9 条

[1] PULSE-METHOD FOR MEASURING CARRIER-LIFETIME IN MIDDLE REGION OF PIN STRUCTURES [J].

BARRAU, J ;

BAILON, L ;

BRABANT, JC ;

BROUSSEAU, M .

REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (01) :19-+

[2]

BARSUKOV YK, 1958, SOV PHYS-TECH PHYS, P806

[3] USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS [J].

BROUSSEAU, M ;

SCHUTTLER, R .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :417-+

[4]

KINGSTON RH, 1954, IRE, P829

[5]

McKelvey J. P., SOLID STATE SEMICOND

[6]

Moll J.L., 1962, Proc. IRE, V50, P43, DOI DOI 10.1109/JRPROC.1962.288273

[7]

SCHWARTZ L, METHODES MATHEMATIQU

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[9] RECOMBINATION IN SILICON P-PI-N DIODES [J].

WILSON, PG .

SOLID-STATE ELECTRONICS, 1967, 10 (02) :145-&

← 1 →