ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF A VISIBLE ALGAAS/INGAP TRANSVERSE JUNCTION STRIPE LASER GROWN BY LIQUID-PHASE EPITAXY

被引：4
作者：
CHANG, LB
SHIA, LZ
机构：
[1] Department of Electrical Engineering, Chung-Cheng Institute of Technology, Tashi
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期
关键词：
D O I：
10.1063/1.106453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-mu-m-wide and 500-mu-m long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300-mu-W/facet were also reported.
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页码：1090 / 1092
页数：3
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