A new photolithography technique called antireflective coating on resist (ARCOR) is described. This method improves linewidth accuracy and overlay accuracy by decreasing the multiple interference effect in a resist film. A clear antireflective film is spun on a photoresist prior to alignment pattern detection and exposure. The film is subsequently removed and the resist developed in the conventional way. Multiple reflection in a resist film is suppressed by this antireflective film, thus enabling patterning and alignment without disturbance caused by multiple interference. With this method, linewidth accuracy becomes 0.03 µm, about one-tenth that of the conventional method, and the alignment signal is improved. © 1990, The Electrochemical Society, Inc. All rights reserved.