A NEW PHOTOLITHOGRAPHY TECHNIQUE WITH ANTIREFLECTIVE COATING ON RESIST - ARCOR

被引:32
作者
TANAKA, T
HASEGAWA, N
SHIRAISHI, H
OKAZAKI, S
机构
[1] Hitachi Limited, Central Research Laboratory, Kokubunji
关键词
D O I
10.1149/1.2086324
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new photolithography technique called antireflective coating on resist (ARCOR) is described. This method improves linewidth accuracy and overlay accuracy by decreasing the multiple interference effect in a resist film. A clear antireflective film is spun on a photoresist prior to alignment pattern detection and exposure. The film is subsequently removed and the resist developed in the conventional way. Multiple reflection in a resist film is suppressed by this antireflective film, thus enabling patterning and alignment without disturbance caused by multiple interference. With this method, linewidth accuracy becomes 0.03 µm, about one-tenth that of the conventional method, and the alignment signal is improved. © 1990, The Electrochemical Society, Inc. All rights reserved.
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页码:3900 / 3905
页数:6
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