EPITAXIAL GROWTH OF GALLIUM ARSENIDE BY USING SILICON TETRACHLORIDE

[1] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[2] FROSCH CJ, 1964, [No title captured], V111, P180

[3] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065

[1] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[2] FROSCH CJ, 1964, [No title captured], V111, P180

[3] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065