A MODEL OF LATTICE-DEFECTS IN SAPPHIRE

被引：58

作者：

POGATSHNIK, GJ ^{[1
]}

CHEN, Y ^{[1
]}

EVANS, BD ^{[1
]}

机构：

[1] BOEING ELECT CO,CTR HIGH TECHNOL,SEATTLE,WA 98124

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337541

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is proposed to account for the changes under ultraviolet illumination of several of the prominent optical absorption bands in neutron irradiated crystalline sapphire. This model, based on both new and previously observed photobleaching and predicted optical anisotropic properties of single and paired anion vacancies, assigns absorption and luminescent bands to specific charge states of anion divacancies. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1709 / 1712

页数：4

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