PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT

被引：1766
作者：
STERN, F
HOWARD, WE
机构：
来源：
PHYSICAL REVIEW | 1967年 / 163卷 / 03期
关键词：
D O I：
10.1103/PhysRev.163.816
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：816 / &
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