PRESSURE-TEMPERATURE PHASE-DIAGRAMS OF HGTE AND HG1-XCDXTE SYSTEMS

被引：23

作者：

FARRAR, RA

GILLHAM, CJ

BARTLETT, B

QUELCH, M

机构：

[1] UNIV SOUTHAMPTON,ENGN MAT LABS,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND

[2] MULLARDS LTD,SOUTHAMPTON,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1977年 / 12卷 / 04期

关键词：

D O I：

10.1007/BF00548181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：836 / 838

页数：3

共 12 条

[1] GROWTH AND PROPERTIES OF CDXHG1-XTE CRYSTALS [J].

BARTLETT, BE ;

DEANS, J ;

ELLEN, PC .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :266-&

[2] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) :989-&

[3]

GILLHAM CJ, 1973, INT C SEMIMETALS NAR

[4]

Gryadil I. A., 1971, Ukrayins'kyi Fizychnyi Zhurnal, V16, P331

[5] VACUUM DEPOSITION OF HG0.8CD0.2TE [J].

HOHNKE, DK ;

HOLLOWAY, H ;

LOGOTHET.EM ;

CRAWLEY, RC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2487-&

[6] VACUUM EVAPORATION OF CD0.1HG1-0.1TE SOLID SOLUTION THIN FILMS [J].

IGNATOWICZ, SA .

THIN SOLID FILMS, 1970, 6 (05) :299-+

[7] ELECTRONS AND HOLES IN HGTE AND HG0.82CD0.18TE WITH CONTROLLED DEVIATIONS FROM STOICHIOMETRY [J].

NISHIZAWA, J ;

SUTO, K ;

KITAMURA, M ;

SATO, M ;

TAKASE, Y ;

ITO, A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (01) :33-42

[8] EFFECTS OF ANNEALING ON ELECTRICAL PROPERTIES OF HGTE CRYSTALS [J].

OKAZAKI, T ;

SHOGENJI, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (05) :439-443

[9] ETUDE DE LEQUILIBRE DE PHASES DANS LE TELLURURE DE MERCURE [J].

RODOT, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) :85-&

[10]

RODOT H, 1964, CR HEBD ACAD SCI, V258, P6386

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