ELECTRONIC PROPERTIES OF AMORPHOUS SILICON IN SOLAR-CELL OPERATION

被引:76
作者
WRONSKI, CR [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
关键词
D O I
10.1109/T-ED.1977.18740
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:351 / 357
页数:7
相关论文
共 11 条
[1]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[2]   AMORPHOUS SILICON SOLAR-CELLS [J].
CARLSON, DE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453
[3]  
CARLSON DE, 1976, 18TH ANN EL MAT C SA
[4]  
Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[5]  
MADEN A, 1976, J NONCRYST SOLIDS, V20, P239
[6]  
Rose A, 1963, CONCEPTS PHOTOCONDUC
[7]  
SCHEWCHUN J, 1974, SOLID STATE ELECTRON, V17, P563
[8]   SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].
WRONSKI, CR ;
CARLSON, DE ;
DANIEL, RE .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :602-605
[9]   EFFECTS OF DEEP CENTERS ON N-TYPE GAP SCHOTTKY BARRIERS [J].
WRONSKI, CR .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3805-&
[10]  
WRONSKI CR, 1976, 1976 IEEE INT EL DEV