ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS

被引:38
作者
BLACK, J
LUBLIN, P
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10.1063/1.1702882
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O59 [应用物理学];
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页码:2462 / &
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[1]   DEPENDENCE OF TENSILE BEHAVIOR OF INSB ON TEMPERATURE, STRAIN-RATE AND OXYGEN CONTENT [J].
ABRAHAMS, MS ;
LIEBMANN, WK .
ACTA METALLURGICA, 1962, 10 (OCT) :941-&
[2]   ELASTIC MODULI OF SINGLE-CRYSTAL GALLIUM ARSENIDE [J].
BATEMAN, TB ;
MCSKIMIN, HJ ;
WHELAN, JM .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :544-545
[3]  
BLACK JG, TO BE PUBLISHED
[4]   VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].
CHAUDHURI, AR ;
PATEL, JR ;
RUBIN, LG .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&
[5]   PRECISE LATTICE CONSTANTS OF GERMANIUM, ALUMINUM, GALLIUM ARSENIDE, URANIUM, SULPHUR, QUARTZ AND SAPPHIRE [J].
COOPER, AS .
ACTA CRYSTALLOGRAPHICA, 1962, 15 (JUN) :578-&
[6]  
COOPER AWM, PRIVATE COMMUNICATIO
[7]  
CUNNELL FA, 1960, SERL TECH J, V10, P83
[8]  
EMELYANENKO OV, 1960, FIZ TVERD TELA, V2, P142
[9]   THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J].
FANE, RW ;
GOSS, AJ .
SOLID-STATE ELECTRONICS, 1963, 6 (04) :383-387
[10]   CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2287-+