SOLID-PHASE LATERAL EPITAXIAL-GROWTH ONTO ADJACENT SIO2 FILM FROM AMORPHOUS-SILICON DEPOSITED ON SINGLE-CRYSTAL SILICON SUBSTRATE

被引:25
作者
OHMURA, Y
MATSUSHITA, Y
KASHIWAGI, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 03期
关键词
D O I
10.1143/JJAP.21.L152
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L152 / L154
页数:3
相关论文
共 9 条
[1]   EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].
BEAN, JC ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61
[2]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[3]   CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].
GAT, A ;
GERZBERG, L ;
GIBBONS, JF ;
MAGEE, TJ ;
PENG, J ;
HONG, JD .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778
[4]   CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].
GIBBONS, JF ;
LEE, KF ;
MAGEE, TJ ;
PENG, J ;
ORMOND, R .
APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833
[5]   EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J].
HUNG, LS ;
LAU, SS ;
VONALLMEN, M ;
MAYER, JW ;
ULLRICH, BM ;
BAKER, JE ;
WILLIAMS, P ;
TSENG, WF .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :909-911
[6]  
MAGEE TJ, 1981, APPL PHYS LETT, V38, P246
[7]   GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY [J].
SAITOH, S ;
SUGII, T ;
ISHIWARA, H ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L130-L132
[8]  
TAMURA M, 1980, JPN J APPL PHYS, V19, P123
[9]   SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS [J].
VONALLMEN, M ;
LAU, SS ;
MAYER, JW ;
TSENG, WF .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :280-282