FREQUENCY-DEPENDENCE OF THE HOPPING CONDUCTIVITY FOR SYSTEMS WITH DIAGONAL DISORDER

被引:1
作者
ZVYAGIN, IP
机构
[1] Moscow State University, Moscow
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 65卷 / 04期
关键词
D O I
10.1080/13642819208204913
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
When the a.c. hopping conductivity is evaluated for systems with diagonal disorder, the pair approximation fails and the conductivity is mainly determined by the contributions from three-site clusters. The frequency and temperature dependences of the conductivity corresponding to these contributions are discussed.
引用
收藏
页码:745 / 748
页数:4
相关论文
共 5 条
[1]   LOCALIZED STATES AND ELECTRONIC TRANSPORT IN SINGLE COMPONENT ORGANIC-SOLIDS WITH DIAGONAL DISORDER [J].
BASSLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01) :9-54
[2]  
Bottger H., 1985, HOPPING CONDUCTION S
[3]  
Mott NF., 1979, ELECT PROCESSES NONC
[4]   LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].
POLLAK, M ;
GEBALLE, TH .
PHYSICAL REVIEW, 1961, 122 (06) :1742-&
[5]  
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