STUDY OF THE INTERFACE OF UNDOPED AND P-DOPED ZNSE WITH GAAS AND ALAS

被引：46

作者：

KASSEL, L ^{[1
]}

ABAD, H ^{[1
]}

GARLAND, JW ^{[1
]}

RACCAH, PM ^{[1
]}

POTTS, JE ^{[1
]}

HAASE, MA ^{[1
]}

CHENG, H ^{[1
]}

机构：

[1] THREE M CO,ST PAUL,MN 55144

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.

引用

页码：42 / 44

页数：3

共 8 条

[1] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J].