STOICHIOMETRY AND ATOMIC DEFECTS IN RF-SPUTTERED SIO

被引：28
作者：
HICKMOTT, TW
BAGLIN, JE
机构：
[1] IBM Thomas J. Watson Reseach Center, Yorktown Heights
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期
关键词：
D O I：
10.1063/1.325662
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron microprobe and helium ion backscattering are used to measure the stoichiometry of rf-sputtered SiO2 films at a precision of ≤1%. Both oxygen-excess and oxygen-deficient films occur. Optical absorption and electron spin resonance characterize atomic defects in the films. The correlation between stoichiometry and atomic defects is poor. The reproducibility of composition and of atomic defects from run to run, when sputtering conditions are held constant, is good.
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页码：317 / 323
页数：7
相关论文
共 29 条
[1]  
ANDERSEN CA, 1966, ELECTRON MICROPROBE, P58
[2]   ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2 [J].
ARNOLD, GW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :220-223
[3]   THEORETICAL ANALYSIS OF ENERGY-SPECTRA OF BACKSCATTERED IONS [J].
BRICE, DK .
THIN SOLID FILMS, 1973, 19 (01) :121-135
[4]   PLASMA DIAGNOSTICS OF AN RF-SPUTTERING GLOW DISCHARGE [J].
COBURN, JW ;
KAY, E .
APPLIED PHYSICS LETTERS, 1971, 18 (10) :435-&
[5]   OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].
FEIGL, FJ ;
FOWLER, WB ;
YIP, KL .
SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229
[6]  
GRISCOM DL, P TOPICAL C ATOMIC S
[7]   DEFECT CENTERS IN OXYGEN-DEFICIENT RF-SPUTTERED SIO2-FILMS .1. ELECTRON-SPIN RESONANCE [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1050-1059
[8]   PRODUCTION AND ANNEALING OF COLOR CENTERS IN RF SPUTTERED SIO2 FILMS [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2543-&
[9]  
JONES RE, 1968, J APPL PHYS, V38, P4656
[10]   SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES [J].
JORGENSO.GV ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2672-&
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