SPATIAL-DISTRIBUTION OF VACANCY DEFECTS IN GAP WAFERS

[1] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS (REDR) AT LOW-TEMPERATURE BY MEANS OF CATHODOLUMINESCENCE AND PHOTO-LUMINESCENCE IN GAP [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02): : K203 - K206

[2] SEM CATHODOLUMINESCENCE STUDIES OF DISLOCATION RECOMBINATION IN GAP [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1419 - 1423

[3] POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03): : 331 - 344

[4] VACANCY DEFECTS IN AS-GROWN AND NEUTRON-IRRADIATED GAP STUDIED BY POSITRONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 385 - 387

[5] A UNIFYING INTERPRETATION OF DARK LINE DEFECTS IN GAAS AND BRIGHT DISLOCATION HALOS IN GAP [J]. PHYSICA B & C, 1983, 116 (1-3): : 420 - 424

[6] IIZUKA T, 1971, J ELECTROCHEM SOC, V118, P1180

[7] INFLUENCE OF MELT COMPOSITION ON THE LONGITUDINAL DISTRIBUTION OF MIDGAP NATIVE DONOR CONCENTRATION IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTAL [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3105 - 3110

[8] KUHNKUHNENFELD F, 1977, I PHYS C SER A, V33, P159

[9] CATHODOLUMINESCENCE FROM DEFORMED CAO [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4570 - 4572

[10] POSITRON TRAPPING AT DISLOCATIONS IN COPPER [J]. CANADIAN JOURNAL OF PHYSICS, 1974, 52 (09) : 759 - 765

[1] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS (REDR) AT LOW-TEMPERATURE BY MEANS OF CATHODOLUMINESCENCE AND PHOTO-LUMINESCENCE IN GAP [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02): : K203 - K206

[2] SEM CATHODOLUMINESCENCE STUDIES OF DISLOCATION RECOMBINATION IN GAP [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1419 - 1423

[3] POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03): : 331 - 344

[4] VACANCY DEFECTS IN AS-GROWN AND NEUTRON-IRRADIATED GAP STUDIED BY POSITRONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 385 - 387

[5] A UNIFYING INTERPRETATION OF DARK LINE DEFECTS IN GAAS AND BRIGHT DISLOCATION HALOS IN GAP [J]. PHYSICA B & C, 1983, 116 (1-3): : 420 - 424

[6] IIZUKA T, 1971, J ELECTROCHEM SOC, V118, P1180

[7] INFLUENCE OF MELT COMPOSITION ON THE LONGITUDINAL DISTRIBUTION OF MIDGAP NATIVE DONOR CONCENTRATION IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTAL [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3105 - 3110

[8] KUHNKUHNENFELD F, 1977, I PHYS C SER A, V33, P159

[9] CATHODOLUMINESCENCE FROM DEFORMED CAO [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4570 - 4572

[10] POSITRON TRAPPING AT DISLOCATIONS IN COPPER [J]. CANADIAN JOURNAL OF PHYSICS, 1974, 52 (09) : 759 - 765