SUB-MICRON GATE GAAS MESFETS WITH ION-IMPLANTED CHANNELS

被引：6
作者：
NOZAKI, T [1 ]
OHATA, K [1 ]
机构：
[1] NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷
关键词：
D O I：
10.7567/JJAPS.16S1.111
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：111 / 114
页数：4
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