SUB-MICRON GATE GAAS MESFETS WITH ION-IMPLANTED CHANNELS

被引：6

作者：

NOZAKI, T ^{[1
]}

OHATA, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：111 / 114

页数：4

共 50 条

[21] 0.25-MU-M GATE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS
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[29] DC PERFORMANCE OF SHORT-CHANNEL ION-IMPLANTED GAAS-MESFETS (THE ROLE OF GATE LENGTH SHORTENING)
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