SUB-MICRON GATE GAAS MESFETS WITH ION-IMPLANTED CHANNELS

被引：6

作者：

NOZAKI, T ^{[1
]}

OHATA, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：111 / 114

页数：4

共 8 条

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[2] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

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[3]

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TANAKA, T ;

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KAWAMURA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1023-1027

[5]

Nozaki T., 1975, Gallium Arsenide and Related Compounds, 1974, P46

[6] SI ION-IMPLANTATION INTO GAAS [J].

NOZAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :1951-1959

[7] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J].

OGAWA, M ;

OHATA, K ;

FURUTSUKA, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :300-305

[8] NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :549-562

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