CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O

被引：26

作者：

JAROS, M ^{[1
]}

ROSS, SF ^{[1
]}

机构：

[1] UNIV NEWCASTLE,DEPT THEORETICAL PHYS,NEWCASTLE UPON TYNE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 23期

关键词：

D O I：

10.1088/0022-3719/6/23/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3451 / 3456

页数：6

共 8 条

[1]

ANIMALU AOE, 1965, 4 SOL STAT THEOR GRO

[2]

[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[3] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[4] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1. [J].

JAROS, M ;

ROSS, SF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10) :1753-1762

[5]

JONES D, UNPUBLISHED

NATHAN, MI ;

PAUL, W .

PHYSICAL REVIEW, 1962, 128 (01) :38-&

[7]

ROSS SF, IN PRESS

[8] LOW-TEMPERATURE HALL MEASUREMENTS ON X1C ELECTRONS IN GAAS [J].

VYAS, MKR ;

PITT, GD ;

HOULT, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (02) :285-299