QUASI-PHASE-MATCHED 2ND-HARMONIC GENERATION IN REFLECTION FROM ALXGA1-XAS HETEROSTRUCTURES

被引：36

作者：

JANZ, S ^{[1
]}

FERNANDO, C ^{[1
]}

DAI, H ^{[1
]}

CHATENOUD, F ^{[1
]}

DION, M ^{[1
]}

NORMANDIN, R ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,SOLID STATE OPTOELECTR CONSORTIUM,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

OPTICS LETTERS | 1993年 / 18卷 / 08期

关键词：

D O I：

10.1364/OL.18.000589

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quasi-phase-matched second-harmonic (SH) generation in reflection geometry is described and demonstrated. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase-matching is demonstrated by using an Al0.8Ga0.2As/GaAs heterostructure designed for lambda = 1.06 mum incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A resonant cavity design that employs this structure to make thin films with extremely high SH generation efficiencies is proposed.

引用

页码：589 / 591

页数：3

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