CHANNEL ELECTRON CONDUCTION IN LASER-ANNEALED POLYCRYSTALLINE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：10
作者：
LEE, HS
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 10期
关键词：
D O I：
10.1063/1.92157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：770 / 772
页数：3
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