LOW SCHOTTKY-BARRIER OF RARE-EARTH SILICIDE ON N-SI

被引：323

作者：

TU, KN

THOMPSON, RD

TSAUR, BY

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 08期

关键词：

D O I：

10.1063/1.92457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：626 / 628

页数：3

共 10 条

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ANDREWS, JM .

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[2] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS [J].

BAGLIN, JE ;

HEURLE, FMD ;

PETERSSON, CS .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :594-596

[3]

MOFFATT WG, 1978, BINARY PHASE DIAGRAM

[4] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE [J].

OHDOMARI, I ;

TU, KN ;

DHEURLE, FM ;

KUAN, TS ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1028-1030

[5]

OHDOMARI J, 1979, J APPL PHYS, V51, P7020

[6] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287

[7]

SALTICK J, 1969, OHMIC CONTACT SEMICO, P167

[8]

SOLOMAN P, COMMUNICATION

[9]

THOMPSON RD, 1979, RC7989 IBM RES

[10]

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