共 50 条
[41]
RADIATIVE RECOMBINATION IN HEAVILY DOPED AND GERMANIUM-COMPENSATED GALLIUM-ARSENIDE
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1984, 18 (05)
:575-576
[43]
NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM
[J].
PHYSICAL REVIEW,
1967, 161 (03)
:711-&
[44]
INFLUENCE OF LOCAL POTENTIAL FLUCTUATIONS ON LOW-TEMPERATURE RADIATIVE RECOMBINATION OF COMPENSATED GERMANIUM
[J].
PHYSICA STATUS SOLIDI,
1969, 33 (02)
:805-&
[45]
Radiative recombination and optical gain spectra in biaxially strained n-type germanium
[J].
PHYSICAL REVIEW B,
2013, 87 (23)
[46]
INFLUENCE OF COMPOSITION ON INTER-IMPURITY RADIATIVE RECOMBINATION IN GERMANIUM-SILICON ALLOYS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1978, 12 (04)
:416-419
[48]
RADIATIVE TRANSITIONS IN GERMANIUM
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B,
1953, 66 (400)
:330-331
[49]
SURFACE RECOMBINATION IN GERMANIUM
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B,
1953, 66 (406)
:899-901