SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE

被引：322

作者：

LEPINE, DJ

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 6卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.6.436

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：436 / &

共 15 条

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[6] SPIN RESONANCE OF LOCALIZED AND DELOCALIZED ELECTRONS IN PHOSPHORUS-DOPED SILICON BETWEEN 20 AND 30 DEGREES K [J].

LEPINE, DJ .

PHYSICAL REVIEW B, 1970, 2 (07) :2429-&

[7]

LEPINE DJ, 1970, 10 P INT C PHYS SEM

[8] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

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[9]

MANY A, 1965, SEMICONDUCTOR SURFAC, P149

[10]

MANY A, 1965, SEMICONDUCTOR SURFAC, P260

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