CHARACTERIZATION OF IMPROVED INSB INTERFACES

被引：51

作者：

LANGAN, JD

VISWANATHAN, CR

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

[2] UNIV CALIF LOS ANGELES,SCH ENGN & APPL SCI,LOS ANGELES,CA 90024

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1474 / 1477

页数：4

共 12 条

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[10] SiO(2) Particulates Dispersed in CVD Reactor [J].

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