ION-IMPLANTED PLANAR-MESA IMPATT DIODES FOR MILLIMETER WAVELENGTHS

被引：4

作者：

LEE, DH

WELLER, KP

THROWER, WF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：714 / 722

页数：9

共 17 条

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[4] MICROSTRIP TRANSMISSION ON SEMICONDUCTOR DIELECTRICS [J].

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[5] PASSIVATED MILLIMETER-WAVE SILICON IMPATT DIODES FABRICATED BY ION-IMPLANTATION [J].

LEE, DH ;

WELLER, KP ;

THROWER, WF .

PROCEEDINGS OF THE IEEE, 1977, 65 (02) :272-273

[6]

Maxwell J.C., 1892, ELECTRICITY MAGNETIS, V1, P452

[7]

MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[8]

MURPHY BT, 1972, Patent No. 3649386

[9]

Murphy R. A., 1972, P S GAAS, P224

[10]

Schwuttke G. H., 1970, Radiation Effects, V6, P103, DOI 10.1080/00337577008235051

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