STRUCTURAL DISORDER AND ELECTRONIC PROPERTIES OF AMORPHOUS SILICON

被引：72

作者：

CHING, WY ^{[1
]}

LIN, CC ^{[1
]}

GUTTMAN, L ^{[1
]}

机构：

[1] ARGONNE NATL LAB,ARGONNE,IL 60439

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.16.5488

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5488 / 5498

页数：11

共 40 条

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[7] ELECTRONIC-ENERGY STRUCTURE OF AMORPHOUS SILICON BY LINEAR COMBINATION OF ATOMIC ORBITALS METHOD [J].

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[8]

CHING WY, 1976, AIP C P, V31, P301

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