CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES

被引：122
作者：
FRITZ, IJ
GOURLEY, PL
DAWSON, LR
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期
关键词：
D O I：
10.1063/1.98984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1004 / 1006
页数：3
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