Nanostructures and semiconductor electronics

In a short introduction limitations of present semiconductor microelectronics are discussed. At the beginning of the next century both technological and physical limits will severely affect further miniaturisation of integrated circuits (IC) into the deep submicron, i.e. below 100 nm feature size range. Several novel device concepts being based on the use of quantum effects in nanostructures are discussed which might open new pathways to faster, lower consumption, and more compact semiconductor ICs: Resonant tunneling structures might play an important role as multifunctional devices which allow the integration of more complex logical functions in one and the same device under more relaxed lithography conditions. A further approach in quantum electronics is focussed on electron interference in high mobility two-dimensional electron gases (2DEG) at semiconductor heterointerfaces. Novel processor concepts might be possible by use of quantum dot arrangements and single electron tunneling. The underlying physics is explained and several experimental approaches for the realisation of quantum dots and wires are presented.