NEGATIVE-RESISTANCE PHENOMENON IN A SEMICONDUCTOR WITH DEEP CENTERS CHANGED INTO TRAPS BY MAGNETO-DEPLETION EFFECT

被引：1

作者：

VIKTOROVITCH, P ^{[1
]}

KAMARINOS, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT, LAB ELECTR, GRENOBLE, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：219 / 224

页数：6

共 18 条

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[12] OBSERVATION OF NEGATIVE RESISTANCE IN LONG SILICON P-PI-N DIODES ( EFFECT OF GE-FILTERED LIGHT - E/T )
MAYER, JW
BARON, R
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (02) : 38 - &
[13] OSIPOV VV, 1968, SOV PHYS SEMICOND+, V1, P1486
[14] STAFEEV VI, 1962, SOV PHYS-SOL STATE, V3, P1829
[15] STAFEEV VI, 1959, SOV PHYS-SOL STATE, V1, P763
[16] VIKTOROV.P, 1971, CR ACAD SCI B PHYS, V273, P631
[17] MAGNETOVOLTAIC EFFECT
VIKTOROVITCH, P
CHOVET, A
KAMARINOS, G
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (09) : 1013 - +
[18] VIKTOROVITCH P, 1972, THESIS GRENOBLE