NEGATIVE-RESISTANCE PHENOMENON IN A SEMICONDUCTOR WITH DEEP CENTERS CHANGED INTO TRAPS BY MAGNETO-DEPLETION EFFECT

被引：1

作者：

VIKTOROVITCH, P ^{[1
]}

KAMARINOS, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT, LAB ELECTR, GRENOBLE, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：219 / 224

页数：6

共 18 条

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