CHARACTERIZATION OF HIGH-EFFICIENCY SOLAR-CELLS BY THEIR SPECTRAL RESPONSE

被引：0

作者：

LE, QN ^{[1
]}

RODOT, M ^{[1
]}

NIJS, J ^{[1
]}

GHANNAM, M ^{[1
]}

COPPYE, J ^{[1
]}

机构：

[1] INTERUNIV MICRO ELECT CTR,B-3001 LOUVAIN,BELGIUM

来源：

JOURNAL DE PHYSIQUE III | 1992年 / 2卷 / 07期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conversion efficiency of polycrystalline silicon solar cells has been raised to 15.6 % (for an area of 4 cm2), using simple processes to improve the base and the back and front surfaces. Spectral response measurements are presented and analyzed using a classical model, in order to reach the main physical parameters. It is found that the initial gettering procedure designed by Martinuzzi and Sarti raises the electron diffusion length in the base to values well above wafer thickness (180-mu-m); that owing to a p/p+ back junction, the back surface recombination rate is reduced to 10-10(2) cm/s; that owing to the emitter back-etching and passivation the front surface recombination rate is reduced to < 10(4) cm/s. These results explain the high efficiency. Improvement possibilities are discussed.

引用

页码：1305 / 1316

页数：12

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