CONTACT RESISTANCE TO HIGH-MOBILITY ALGAAS/GAAS HETEROSTRUCTURES

被引：7
作者：
HAWKSWORTH, SJ
CHAMBERLAIN, JM
CHENG, TS
HENINI, M
HEATH, M
DAVIES, M
PAGE, AJ
机构：
[1] Dept. of Phys., Nottingham Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 08期
关键词：
D O I：
10.1088/0268-1242/7/8/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an investigation of contact resistance to high-mobility 2DEG structures (approximately 1 x 10(6) cm2 V-1 s-1) as a function of temperature (30-300 K) and magnetic field (0-0.6 T). The transmission line model (TLM) and the two-layer TLM Of Look are used to evaluate the contact resistance. The calculated specific contact resistance shows a strong temperature dependence, with both thermionic and tunnelling behaviour. The vestiges of an interface remain below the contact region. Using the two-layer TLM analysis, the degree of parallel conduction in the samples is obtained.
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页码：1085 / 1090
页数：6
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