PLATINUM SILICIDE-ALUMINUM SCHOTTKY DIODE CHARACTERISTICS

被引:12
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HOSACK, HH
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10.1063/1.1654367
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O59 [应用物理学];
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页码:256 / &
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[1]   PLANAR MESA SCHOTTKY BARRIER DIODE [J].
ANANTHA, NG ;
ASHAR, KG .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :442-+
[2]  
KAMOSHIDA M, 1970, NEC J RES DEVELOP, V16, P24
[3]   ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI [J].
KAWAMURA, T ;
SHINODA, D ;
MUTA, H .
APPLIED PHYSICS LETTERS, 1967, 11 (03) :101-+