MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS

被引：17

作者：

GROTHE, H

PROEBSTER, W

HARTH, W

机构：

[1] Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universität München, D-8000 München 2, W. Germany

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 22期

关键词：

Light-emitting diodes; Optical modulation;

D O I：

10.1049/el:19790499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 µm wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：702 / 703

页数：2

共 10 条

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