STRUCTURE-ANALYSIS OF SILICON DIOXIDE FILMS FORMED BY OXIDATION OF SILANE

被引：52
作者：
NAGASIMA, N
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来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 08期
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D O I：
10.1063/1.1661723
中图分类号：
O59 [应用物理学];
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页码：3378 / &
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