FERROMAGNETIC RESONANCE IN SI-DOPED YIG

被引：51

作者：

HARTWICK, TS

SMIT, J

机构：

[1] Departments of Electrical Engineering and Materials Science, University of Southern California, Los Angeles

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 10期

关键词：

D O I：

10.1063/1.1657133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetocrystalline anisotropy of Fe2+ ions in YIG has been studied by means of FMR at 10 and 30 GHz at temperatures between 4°and 400°K. Below 50°K strong magnetic anneal occurs. Anneal fields were in the [100], [111], and [110] directions. The g factor is 1.98 at 4.2°K and 1.96 at 290°K. At low temperature the resonance field HR is less than ω/γ by as much as 2000 Oe for all orientations in the (110) plane. The HR versus angle curves are explained quantitatively by taking into account canting of the spins around the Fe2+ ions as well as perturbing electrostatic fields of the neighboring Si ions. The correct temperature dependence and anisotropy of the linewidth ΔH also follow from the model calculation. © 1969 The American Institute of Physics.

引用

页码：3995 / &

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